Monday, Oct. 25, a.m. / Virtual
|
(1) |
Opening remarks
K. Nakamae
Chairman, The Institute of NANO Testing
|
9:20-9:30 |
Invited Talk I
|
Chairman: Suigen Kyoh |
(I1) |
Advancement of optical measurement techniques using versatile control of optical waves with optical frequency combs
K. Minoshima
Grad. Sch. Informatics and Engineering, Univ. Electro-Communications
|
9:30-10:30 |
《 10:30-10:40 Authors corner & break》 |
Metrology and Inspection
|
Chairman: Yuichiro Yamazaki |
(2) |
Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation
K. Sasaki, T. Hashimoto, Y. Kuo, H. Tsukada, and H. Tanizaki
Institute of Memory Technology Research & Development, Kioxia Corp.
|
10:40-11:05 |
(3) |
Advanced high throughput e-beam inspection with DirectScan
M. Strojwas(a, M. Miyoshi(c, I. De(b, and M. Keleher(c
a)DFM Solutions, PDF Solutions, Inc., b)VCI E-beam R&D, PDF Solutions, Inc., c)Technical Account Management, PDF Solutions, Inc.
|
11:05-11:30 |
《 11:30-11:50 Authors corner & break》 |
《 11:50-13:00 Lunch Break》 |
Monday, Oct. 25, p.m. / Virtual
|
Invited Talk II
|
Chairman: Suigen Kyoh |
(I2) |
Semiconductor strategy to enhance international competitiveness
T. Mitsui
JEITA Semiconductor Steering Committee & Chairperson
|
13:00-14:00 |
《 14:00-14:10 Authors corner & break》 |
Tutorial I
|
Chairman: Koji Nakamae |
(T1) |
Basics of power semiconductor devices and their characteristics (structure, application, reliability)
K. Endo
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
|
14:10-15:10 |
《 15:10-15:20 Authors corner & break》 |
Power Device Analysis
|
Chairman: Toru Koyama |
(4) |
Carrier lifetime characterization in SiC devices by a microscopic free carrier absorption method
M. Kato(a, T. Fukui(a, and T. Tawara(b
a)Grad. Sch. Engineering, Nagoya Institute of Technology, b)National Institute of Advanced Industrial Science and Technology
|
15:20-15:45 |
(5) |
Visualization of nanoscale carrier dynamics at SiO2/SiC interfaces by time-resolved scanning nonlinear dielectric microscopy
K. Yamasue and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
|
15:45-16:10 |
《 16:10-16:30 Authors corner & break》 |
Commercial Session
|
Chairman: Hitoshi Maeda |
(C1) |
New inspection method for Si crystal defects by photoluminescence
T. Kida
Marketing, Semilab Japan
|
16:30-16:38 |
(C2) |
Layout and schematic analysis in HAMAMATSU interface suite
M. Nikaido, T. Takahashi, Y. Sawamura, and K. Hirai
EDA Product Div., TOOL Corp.
|
16:38-16:46 |
(C3) |
Introduction of nano prober service for advanced process products
K. Inomata, H. Kawahara, and H. Tsukui
Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd.
|
16:46-16:54 |
(C4) |
Evolved micro probing system
Y. Nakashima(a, J. Sukegawa(a, and C. Rob(b
a)Sales I Div., TOKI COMMERCIAL Co., LTD, b)Sales Div., Imina Technologies SA
|
16:54-17:02 |
(C5) |
Ultra-thin film evaluation combining planar STEM observation and surface analysis technologies
T. Hirano, S. Matsuo, and N. Okano
Applied Physics Engineering Dept., Material Solution Div., Technical Div., KOBELCO research institute. Inc.
|
17:02-17:10 |
(C6) |
Introduction of the new CAD navigation system "AZSA" for failure analysis
K. Konishi
Sales Gr, Astron. Inc.
|
17:10-17:18 |
(C7) |
FIB-SEM extensions for failure analysis: rapid processing with fs-laser and ToF-SIMS analysis
E. Maeda and A. Sato
Research Microscopy Solutions, Carl Zeiss Co., Ltd.
|
17:18-17:26 |
(C8) |
Electrical probing solutions and applications for micro and nanoscale device characterization
R. Claassen(b and Y. Nakayama(a
a)APOLLOWAVE Corp., b)Sales Dept., Imina Technologies SA
|
17:26-17:34 |
Tuesday, Oct. 26, a.m. / Virtual
|
Tutorial II
|
Chairman: Yoichi Ose |
(T2) |
Physical analyses of semiconductor devices using charged particle beam instruments
A. Morikawa(a and T. Sato(b
a)Analysis System Solution Development Dept., Hitachi High-Tech Corp., b)Semiconductor Analysis Systems Solution Development Dept., Hitachi High-Tech Corp.
|
9:30-10:30 |
《 10:30-10:40 Authors corner & break》 |
Electron Optics & Application
|
Chairman: Yuichiro Yamazaki |
(6) |
Development of tilt observation technique for defect evaluation SEM "CT1000"
T. Hattori(a, M. Ieda(a, N. Okai(b, and N. Suzuki(a
a)Electron Beam Systems Design Dept., Hitachi High-Tech Corp., b)Research&Development Group, Hitachi Ltd.
|
10:40-11:05 |
(7) |
Noise reduction in phase reconstruction of electron holograms using an aperture shape optimization by Fourier ring correlation
T. Okada, Y. Midoh, K. Nakamae, and N. Miura
Grad. Sch. Information Science and Technology, Osaka Univ.
|
11:05-11:30 |
《 11:30-11:50 Authors corner & break》 |
《 11:50-13:00 Lunch Break》 |
Tuesday, Oct. 26, p.m. / Virtual
|
Fault Localization I
|
Chairman: Hirotoshi Terada |
(8) |
In-line schematic failure analysis technique with fewer frame defect SEM images
J. Okude, C. Ida, K. Nojima, and A. Hamaguchi
The Advanced Memory Development Center, KIOXIA Corp.
|
13:00-13:25 |
(9) |
High throughput copper removal of frontside circuit edit
H. Tanaka(a, M. Wong(b, D. Pan(b, S. Kunihiro(c, and M. Sato(c
a)FEI Company Japan Ltd., b)Analytical Instruments Materials and Structural Analysis, Thermo Fisher Scientific, c)DENKEN Co. Ltd.
|
13:25-13:50 |
《 13:50-14:10 Authors corner & break》 |
Fault Localization II
|
Chairman: Kiyoshi Nikawa |
(10) |
Evaluation of characteristic changes of high voltage transistor by electron beam irradiation
A. Hisasue, T. Ukai, H. Maeda, and K. Arima
Analysis & Evaluation Technology Dept. Device Technology Div. Production and Technology Unit, Renesas Electric Corp.
|
14:10-14:35 |
(11) |
An approach to enhance the resolution of fault diagnosis using both scan and IDDQ data
S. Honbu, S. Nomura, S. Wada, N. Matsui, H. Yamamoto, and T. Okubo
Evaluation Analysis Dept., Renesas Engineering Services
|
14:35-15:00 |
《 15:00-15:20 Authors corner & break》 |
Invited Talk III
|
Chairman: Koji Nakamae |
(I3) |
Next-generation computing system based on electromagnetic near field design and advanced assembly technology
N. Miura(a, (b
a)Grad. Sch. Information Science and Technology, Osaka Univ., b)JST PRESTO
|
15:20-16:20 |
《 16:20-16:30 Authors corner & break》 |
Evening Session I
|
Location: Virtual |
|
Evening Session I
Evening session of NANOTS is a special session for discussing on research trend around the world and the future perspective.
|
16:30-18:00 |
Evening Session II Special Invited Talk
|
Chairman: Suigen Kyoh |
(S1) |
TEZUKA2020 and how AI technologies were used in it
R. Orihara
KIOXIA Corp.
|
18:00-19:00 |
《 19:00 Close》 |
Wednesday, Oct. 27, a.m. / Virtual
|
Machine Learning for Process Control
|
Chairman: Toru Koyama |
(12) |
A data-driven method for finding physical laws using neural networks with polynomial constraints
T. Takemoto, Y. Midoh, K. Nakamae, and N. Miura
Grad. Sch. Information Science and Technology, Osaka Univ.
|
9:30-9:55 |
(13) |
A deep generative model of the SEM image using a small simulation dataset
Y. Midoh, K. Iwamoto, K. Nakamae, and N. Miura
Grad. Sch. Information Science and Technology, Osaka Univ.
|
9:55-10:20 |
《 10:20-10:40 Authors corner & break》 |
Fault Localization III/Physical Analysis I
|
Chairman: Kiyoshi Nikawa |
(14) |
Effectiveness of failure analysis by laser stimulation in visible light region
T. Matsumoto(a and K. Koshikawa(b
a)Systems Technology, Systems Div., Hamamatsu Photonics K. K., b)Dept. 18, Systems Div., Hamamatsu Photonics K. K.
|
10:40-11:05 |
(15) |
Heat transfer simulations of nanoporous materials with two-dimensionally arranged pores
Y. Takagishi, K. Koga, and T. Yamaue
Computational Science Center, Kobelco Research Institute Inc.
|
11:05-11:30 |
《 11:30-11:50 Authors corner & break》 |
《 11:50-13:00 Lunch Break》 |
Wednesday, Oct. 27, p.m. / Virtual
|
Physical Analysis II
|
Chairman: Yasuhisa Higuchi |
(16) |
Nanoscale study of interface defect density evaluation at diamond MOS interfaces using time-resolved scanning nonlinear dielectric microscopy
Y. Ogata(a, K. Yamasue(a, X. Zhang(b, T. Matsumoto(b, N. Tokuda(b, and Y. Cho(a
a)Research Institute of Electrical Communication, Tohoku Univ., b)NanoMaterials Research Institute, Kanazawa Univ.
|
13:00-13:25 |
(17) |
Measurement of local capacitance-voltage characteristics on high-k/SiO2/Si under DC bias stress using time-resolved scanning nonlinear dielectric microscopy
K. Suzuki, K. Yamasue, and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
|
13:25-13:50 |
《 13:50-14:10 Authors corner & break》 |
Physical Analysis III
|
Chairman: Yoichi Ose |
(18) |
Visualization of work function differences and band gaps by spectrum imaging using AES
K. Ikita(a, T. Uchida(a, K. Yokouchi(a, A. Tanaka(a, K. Tsutsumi(a, N. Ikeo(b, and N. Taguchi(b
a)SA Business Unit, JEOL Ltd., b)Research Institute of Electrochemical Energy, Dept. Energy and Environment, National Institute of Advanced Industrial Science and Techvology
|
14:10-14:35 |
(19) |
Development of 3D visualization technique for diffusion layer using active voltage contrast in FIB-SEM system
Y. Minami, N. Murata, Y. Shimada, N. Nakajima, A. Sugiyama, H. Arie, and Y. Kunimune
Analysis & Evaluation Technology Dept., Device Technology Div., Production and Technology Unit, Renesas Electronics
|
14:35-15:00 |
《 15:00-15:20 Authors corner & break》 |
Physical Analysis IV
|
Chairman: Yasuo Cho |
(20) |
Characterizations of multi quantum well and impurity doping in nanowire-LEDs using atom probe tomography
N. Mayama(a, S. Nakajima(a, J. Koyama(a, N. Arai(a, K. Jogo(a, S. Ishimura(a, N. Sone(b, T. Takeuchi(c, and S. Kamiyama(c
a)Physical Analysis Technology Center, Toshiba Nanoanalysis Corp., b)Koito Manufacturing Corp., c)Faculty of Science and Technology, Meijyo Univ.
|
15:20-15:45 |
(21) |
Low voltage SEM observation of p-type SiC adopting secondary electron energy filtering
A. Mikami, E. Nakatani, H. Fujiwara, and M. Hara
Power Electronics R & D Div. 1, MIRISE Technologies Corp.
|
15:45-16:10 |
《 16:10-16:30 Authors corner & break》 |
Panel Session
|
Moderator: Yasunori GOTO (MIRISE Technologies) |
|
Characteristics of outsourced analysis Strengths
|
16:30-17:50 |
(P1) |
sMIM imaging with the original processing technology managing every sample regardless of Si or compound semiconductor
K. Takagi
ITES Co., Ltd.
|
|
(P2) |
Analytical techniques for approaching the root cause of power device failures
T. Hirano
Kobelco Research Institute, Inc.
|
|
(P3) |
Introduction of original lab-HAXPES (DELMA: Display-type ELlipsoidal mesh analyzer)
M. Taguchi
Toshiba Nanoanalysis Corp.
|
|
(P4) |
Analysis services in toray research center for cutting-edge semiconductor devices
U. Matsuwaki
Toray Research Center Inc.
|
|
(P5) |
Proposal of LSI internal state analysis
Y. Matsumoto
Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd.
|
|
(P6) |
Analysis of lithium-ion batteries damaged by ignition
K. Takamori
Oki Engineering Co., Ltd.
|
|
《 17:42-17:50 Networking with panelists》 |
(22) |
Closing remarks
K. Nakamae
Chairman, The Institute of NANO Testing
|
|