ナノテスティングシンポジウム

Annual Nano Testing Symposium

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NANOTS2019

Technical Program

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Monday, Nov. 18, a.m. / KFC Hall

Electron Optics & Application

Chairman: Yoichi Ose
(1)
Analysis for degraded dielectric material using voltage contrast method in SEM
A. Saito
Capactor Div., Murata Manufacturing Co., Ltd.
9:30-9:55
(2)
Diagnosing capacitance of LSI internal structure by frequency modulated SEM
H. Kimizuka(a, N. tsuno(a, K. Norimatsu(b, A. Okita(a, Y. Iwabuchi(a, J. Tanaka(a, and M. Fukuda(a
a)Metrology and Analysis Systems Research and Development Dept., Hitachi High-Technologies Corp., b)Nano-process Research Dept., Hitachi, Ltd.
9:55-10:20
(3)
Crystal structure analysis of HfZrOx films using precession electron diffraction
Y. Shimada(a, Y. Kunimune(a, T. Yamaguchi(b, M. Inoue(b, and T. Ide(a
a)Analysis & Evaluation Technology Dept., Device Technology Div., Production And Technology Unit, Renesas Electronics Corp., b)Thin Film & Wet/Diffusion Engineering Dept., Process Production Technology Div., Production And Technology Unit, Renesas Electronics Corp.
10:20-10:45
《 10:45-11:05 Authors corner & break》

Commercial Session

Chairman: Shinobu Motegi
(C1)
Nondestructive 3D observation inside wide gap semiconductor crystal by MPPL method
A. Tsurumune
AE Dept., Bioscience sales Div., NIKON INSTECH Co., LTD
11:05-11:12
(C2)
Optical zoom microscope & infrared microscope
Y. Nakashima
Sales I Div., TOKI COMMERCIAL Co., LTD
11:12-11:19
(C3)
Analysis system using lock-in thermal emission
K. Takamoir
Reliability Analysis Div. Marketing & Technology Sales Group, Oki Engineering Co., Ltd.
11:19-11:26
(C4)
MARUBUN failure analyses solution
T. Ueno and N. Nanbu
Sales Dept. 1, Systems Sales & Marketing Div. 2, MARUBUN Corp.
11:26-11:33
(C5)
Development of high-precision polishing technology
H. Matsubayashi
Nanotechnology Solution Div., BN TECHNOLOGY Corp.
11:33-11:40
(C6)
CAD navigation system: HAMAMATSU interface suite
M. Nikaido, T. Takahashi, Y. Sawamura, and K. Hirai
EDA Product Div., TOOL Corp.
11:40-11:47
(C7)
Introduction of the new CAD navigation system "AZSA" for failure analysis
K. Konishi
Sales Gr, Astron, Inc.
11:47-11:54
(C8)
Introduction of reliability evaluation and fault localization analysis services (EOP/EOFM)
K. Inomata, H. Kawahara, and H. Tsukui
Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd.
11:54-12:01
(C9)
Introduction of OBIRCH analysis for power device
S. Tominaga, T. Matsumoto, and I. Yoshihiro
Semiconductor Inspection, Systems Dept., Systems Div., Hamamatsu Photonics K. K.
12:01-12:08
(C10)
High-volue laser-based sample preparation for semiconductor and materials failure analysis
B.A. Rottwinkel
3D MICROMAC
12:08-12:15
(C11)
Introduction of hitachi high-frequency system DRS
T. Shimamori, J. Fuse, M. Komori, and T. Mizuno
Hitachi high-technologies Corp.
12:15-12:22
(C12)
High throughput TEM/STEM/EDS analysis using auto functions of talos F200X
N. Nakanishi and H. Sekiguchi
NanoPort Japan, Thermo Fisher Scientific
12:22-12:29
(C13)
Applications of laser-Raman spectroscopy for semiconductors
K. Isoo
Technology Unit, TAKASAGO Lab., KOBELCO RESEARCH INSTITUTE,INC.
12:29-12:36

Poster Short Presentation

Chairman: Shinobu Motegi
Poster Short Presentation
One minute abstract presentation by poster session presentors. Please see "Poster Session" for list of presentations.
12:36-12:40

Hitachi High-Technologies Luncheon Seminar

(L1)
Luncheon Seminar by Hitachi High-Technologies Corporation: ``Introduction of electron microscopes for semiconductor analysis provided by Hitachi High-Technologies''
*pre-registration required
12:40-13:40

Monday, Nov. 18, p.m. / KFC Hall

Power Device Analysis I

Chairman: Yasuo Cho
(4)
Evaluation of crystal defects in semiconductor materials for next-generation power devices with high reliability
Y. Yao(a, Y. Ishikawa(a, Y. Sugawara(b, and D. Yokoe(b
a)Materials R&D Lab., Japan Fine Ceramics Center, b)Nanostructures Res. Lab., Japan Fine Ceramics Center
13:40-14:05
(5)
Quantitative evaluation of high emissive film and investigation of localizing precision using the film
N. Chinone, T. Matsumoto, and K. Koshikawa
System Div., Hamamatsu Photonics K. K.
14:05-14:30
《 14:30-14:50 Authors corner & break》

Power Device Analysis II

Chairman: Yasunori Goto
(6)
Dopant profiles and internal changes in power MOS-FETs analyzed by scanning probe microscopy
Y. Miyato(a, Hiroki(a, N.H. Nakamoto(a, Y. Terui(a, A. Doi(b, H. Yamamoto(c, and N. Satoh(b
a)Semiconductor Analysis Lab., Evaluation and Analysis Technology Center, Toshiba Nanoanalysis Corp., b)Faculty of Eng., Dept. of Innovative Mech. and Electro. Engineering, Chiba Institute of Technology, c)Faculty of Eng., Dept. of Electrical and Electronic Engineering, Chiba Institute of Technology
14:50-15:15
(7)
Observation of emission at single pulse avalanche breakdown of insulated gate bipolar transistor (IGBT)
K. Endo(a, T. Nakamura(b, N. Chinone(b, T. Matsumoto(b, and K. Nakamae(c
a)Discrete Semiconductor Quality & Reliability Engineering Dep., Toshiba Electronic Devices & Storage Corp., b)Systems Div., Hamamatsu Photonics K. K, c)Grad. Sch. Information Science and Technology, Osaka Univ.
15:15-15:40
(8)
Evaluation of interface defect density distribution on macrostepped SiO2/SiC by time-resolved local deep level transient spectroscopy
A. Hosaka(a, K. Yamasue(a, J. Woerle(b, G. Ferro(d, U. Grossner(b, M. Camarda(c, and C. Yasuo(a
a)Research Institute of electrical commnication, Tohoku Univ., b)Advanced Power Semiconductor Lab., ETH Zurich, c)Paul Scherrer Institute, d)Lyon Univ.
15:40-16:05
《 16:05-16:25 Authors corner & break》
《 16:25-16:35 Group Photo》

Special Invited Talk

Chairman: Yasuhisa Higuchi
(S1)
Reliability in the railway system
H. Nomoto
Railway Systems Business Unit, Hitachi, Ltd.
16:35-17:35
《 17:35-18:30 Discuss with invited speaker & Poster session》

Poster Session

《 17:35-18:30 Lobby in front of KFC Hall》
(9)
Characteristic deterioration of the memory device by X-ray inspection and effect of the metal filter
M. Ishimoto and T. Watanabe
The third Div. X-rays Development Div., MARS TOHKEN SOLUTION Co., LTD
(10)
Characterization of semiconductors using higher-harmonic ∂C/∂z-SNDM signal
Y. Hiranaga and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
(11)
Cell state prediction of cultured adipocyte from quantitative phase microscope images using deep learning
S. Tanigawa, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(12)
Study on time-series data prediction using explainable deep-learning algorithms
K. Shinoda, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(13)
Performance improvement in dual-tree complex wavelet-based denoising by redesigning the first-scale filters
Y. Midoh and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(14)
Residue reduction method by repairing defects of interference fringes in electron hologram
K. Miura(a, Y. Midoh(a, Y. Murakami(b, and K. Nakamae(a
a)Grad. Sch. Information Science and Technology, Osaka Univ., b)Faculty of Engineering, Kyushu Univ.

Evening Session

Location: KFC Hall
Evening Session
Evening session of NANOTS is a special session for discussing on research trend around the world and the future perspective.
18:30-20:30
 
International Conference Report
 
IPFA 2019 (H. Terada, Hamamatsu Photonics)
 
MC 2019 (M. Suga, JEOL Ltd.)
 
ESREF 2019 (Y. Cho, Tohoku University)

Tuesday, Nov. 19, a.m. / KFC Hall

Invited Talk

Chairman: Toru Koyama
(I1)
R&D of 3D-IC technology contributes to AI/IoT society
K. Kikuchi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
9:00-10:00
《 10:00-10:20 Discuss with invited speaker》

Physical Analysis

Chairman: Hitoshi Maeda
(15)
Three dimensional analysis of semiconductor devices using orthogonal FIB-SEM
Y. Orai(a, Y. Ii(a, T. Sato(a, H. Kawada(a, J. Katane(a, and X. Man(b
a)Metrology and Analysis Systems Product Div., Hitachi High-technologies, b)Beam Technology Developement Dept., Hitachi High-tech Science
10:20-10:45
(16)
Applications of novel imaging technique to enhance image contrast for semiconductor samples
L. Zhang, N. Croy, N. Nakanishi, and M. Williamson
Thermo Fihser Scientific
10:45-11:10
(17)
Improvement of signal-to-noise ratio in semiconductor carrier distribution imaging by intermittent scanning nonlinear dielectric microscopy
K. Yamasue and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
11:10-11:35
(18)
Development of cantilevers with insulating coating for semiconductor carrier distribution imaging using scanning nonlinear dielectric microscopy and its application to layered semiconductors
K. Takano, K. Yamasue, and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
11:35-12:00
《 12:00-12:20 Authors corner & break》
《 12:20-13:20 Lunch Break》

Tuesday, Nov. 19, p.m. / KFC Hall

Fault Localization I

Chairman: Hirotoshi Terada
(19)
Analytical technique of the CMOS image sensor using the visible light laser
M. Tsujita, G. Kataoka, T. Nukumizu, and T. Kawamura
MIS Product Div., Device Analysis Engineering Dept, Sony Semiconductor Manufacturing Corp.
13:20-13:45
(20)
Cross sectional OBIRCH & EBAC combined analysis applied to high voltage devices
T. Ukai, H. Maeda, K. Arima, T. Okazaki, H. Arie, and T. Ide
Production and Technology Unit. Device Technology Dev. Analysis & Evaluation Technology Dept., Renesas Electronics Corp.
13:45-14:10
《 14:10-14:30 Authors corner & break》

Fault Localization II

Chairman: Kiyoshi Nikawa
(21)
Fault localization techniques using lock-in thermography for IDDQ state-dependent thermal reactions
N. Matsui, T. Ohkubo, S. Nomura, Y. Oka, S. Wada, and H. Tsukui
Evaluation Analysis Dept., Renesas Engineering Services
14:30-14:55
(22)
Observation of second harmonic response phenomena using lock-in thermography (LIT)
T. Izumiya(a, K. Endo(a, T. Kaneoka(b, and T. Matsumoto(b
a)Discrete Semiconductor Quality & Reliability Engineering Dep., Toshiba Electronic Devices & Storage Corp., b)Systems Div., Hamamatsu Photonics K. K
14:55-15:20
(23)
Studies of fault isolation technique for open defects using magneto-optical current imaging
M. Saeki(a, Y. Maehara(a, Y. Matsumoto(a, H. Tsukui(a, T. Matsumoto(b, and N. Chinone(b
a)Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd., b)Systems Div., Hamamatsu Photonics K. K.
15:20-15:45
(24)
Overcoming challenges in circuit-edit with modern tools and techniques
M. Wong, D. Donnet, O. Sidorov, H. Tanaka, and N. Leslie
Materials & Structural Analysis, Fremont, CA USA, Thermo Fisher Scientific
15:45-16:10
《 16:10-16:30 Authors corner & break》

Panel Discussion

Moderator: Mitsuo Suga (JEOL Ltd.)
Image analysis using deep learning
16:30-17:50
H. Ishikawa (Waseda Univ.)
Y. Kubota (National Inst. for Physiol. Sci.)
K. Konishi (Nikon Corp.)
Y. Miura (Canon Inc.)
(P1)
Image transformation using deep learning
H. Ishikawa
Faculty of Science and Engineering, Waseda Univ.
(P2)
Acquisition of large volume EM data set and 3D reconstruction with automated segmentation application
Y. Kubota
Div. of Cerebral Circuitry, National Institute for Physiological Sciences
(P3)
Issues for microscopy image analysis
K. Konishi
Nikon Corp.
(P4)
Application of machine learning for detecting anomalies in resist filling on nanoimprint process
Y. Miura
Canon Inc.

Tuesday, Nov. 19, p.m. / KFC Hall 2nd

Invited Talk

Chairman: Tetsuro Nakasugi
(I2)
Extending nanoimprint lithography to 1xnm nodes and expectations for metrology
K. Sakai
Semiconductor Production Equipment PLM Center 3, Canon Inc.
13:20-14:10
《 14:10-14:30 Discuss with invited speaker》

Metrology and Inspection

Chairman: Yuichiro Yamazaki
(25)
Contour extraction method using deep learning for design based metrology and design based inspection
R. Yumiba(a, S. Shinoda(a, Y. Toyoda(a, H. Shindo(a, M. Izawa(a, M. Ishikawa(b, and S. Sakimura(b
a)Metrology System Software Design Dept, Hitachi High-Technologies Corp., b)Inovation center of control, Hitachi, Ltd.
14:30-14:55
(26)
A study of lithography process prediction using GAN
T. Ohashi(a, Y. Kono(b, A. Nakajima(a, C. Ida(c, and A. Hamaguchi(c
a)Institute of Memory Technology Research & Development, Kioxia Corp., b)Corporate Manufacturing Engineering Center, Toshiba Corp., c)Advanced Memory Development Center, Kioxia Corp.
14:55-15:20
(27)
Study on a parameter optimization of scanning electron microscope simulation using deep learning
K. Iwamoto, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
15:20-15:45
(28)
Novel approach of machine learning for detecting anomalies in resist filling on nanoimprint process.
Y. Miura, O. Morimoto, N. Takakura, K. Yamamoto, S. Aihara, and F. Kizu
Semiconductor Production Equipment NGL Design Dept. 25, Canon Inc.
15:45-16:10
《 16:10-16:30 Authors corner & break》