ナノテスティングシンポジウム

Annual Nano Testing Symposium

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NANOTS2018

講演プログラム

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11月19日(月) 午前 / KFCホール

Power Device Analysis I

Chairman: 樋口裕久
(1)
Enhancement of thermal analysis capability of power semiconductor devices by searching high-emissivity films
N. Chinone, T. Matsumoto, and K. Koshikawa
System Div., Hamamatsu Photonics K. K.
9:30-9:55
(2)
Application to a package failure analysis of ultrasonic beam induced resistance change (SOBIRCH)
T. Matsumoto(a, S. Eura(a, Y. Ito(a, T. Matsui(b, and N. Hozumi(b
a)Systems Div., Hamamatsu Photonics K. K., b)Dept. Electrical & Electronic Information Engineering, Toyohashi Univ. Technology
9:55-10:20
(3)
High resolution mapping of subsurface defects at SiO2/SiC interfaces by local deep level transient spectroscopy
Y. Yamagishi and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
10:20-10:45
《 10:45-11:05 オーサーズコーナー&休憩》

Commercial Session

Chairman: 小山 徹
(C1)
Teseda DFT analysis system
K. Sawada, H. Maekawa, and T. Anayama
Infinite Solutions Inc.
11:05-11:12
(C2)
Navigation system AZSA
K. Konishi
Product Planning & Development Group, Astron, Inc.
11:12-11:19
(C3)
Link functions in LAVIS-plus
M. Nikaido, T. Takahashi, Y. Sawamura, and K. Hirai
EDA Product Div., TOOL Corp.
11:19-11:26
(C4)
Introduction of a new thermal emission microscope Thermal F1.
H. Shirai, A. Kataoka, and K. Nishizawa
Systems Div. Business Promotion Dept., Hamamatsu Photonics K. K.
11:26-11:33
(C5)
Introduction of precision polishing for cross-layer analysis of brittle material
H. Matsubayahi
Nanotechnology Solution Div. Precision Instrument Group, BN TECHNOLOGY Corp.
11:33-11:40
(C6)
Proposal of analysis solution
T. Ueno(a and N. Nanbu(b
a)Industrial Systems Team Sales Dept. 1 Systems Sales & Marketing Div. 2, Marubun Corp., b)Sales Dept. 2 Device Sales & Marketing Div. 2, Marubun Corp.
11:40-11:47
(C7)
Intruduction of the latest automation application of SEM/FIB dual beam system
T. Muneta
Materials & Structural Analysis, Thermo Fisher Scientific
11:47-11:54
(C8)
Introduce circuit edit FIB Taipan G2 for 7nm process node
S. Motegi
Materials & Structural Analysis, Thermo Fisher Scientific FEI Company Japan Ltd.
11:54-12:01
(C9)
Introduction of new FIB-SEM system
N. Suzuki and T. Aiso
NanoImaging & Analysis, TOYO Corp.
12:01-12:08
(C10)
The introduction of high performance FIB-SEM system ETHOS NX5000
T. Sato(a, A. Morikawa(a, S. Sato(a, C. Kamiya(a, Y. Yamamoto(b, and H. Suzuki(b
a)Science System Prduct Div., Hitachi High-Technologies Corp., b)Beam Technology Systems Design Dept., Hitachi High-Tech Science Corp.
12:08-12:15
(C11)
Introduction of STEM-NBD and strain analysis software Epsilon
N. Nakanishi, H. Sekiguchi, and M. Munekane
NanoPort Japan, Thermo Fisher Scientific
12:15-12:22

Poster Short Presentation

Chairman: 小山 徹
Poster Short Presentation
One minute abstract presentation by poster session presentors. Please see "Poster Session" for list of presentations.
12:22-12:30
《 12:30-12:40 写真》

Hitachi High-Technologies Luncheon Seminar

(L1)
Semiconductor analysis solutions proposed by Hitachi High-Technologies Corporation
*pre-registration required
12:40-13:40

11月19日(月) 午後 / KFCホール

Special Invited Talk

Chairman: 茂木 忍
(S1)
Special invited talk: Edge platform strategy to realize society 5.0
S. Saito
Device & System Platform Development Center Co., Ltd.
13:40-14:40
《 14:40-15:00 休憩・招待講演者との懇談》

Power Device Analysis II

Chairman: 後藤安則
(4)
Nanoscale evaluation of power semiconductor devices by scanning capacitance force microscope
N. Satoh(a and H. Yamamoto(b
a)Faculty of Eng., Dept. of Innovative Mech. and Electro. Engineering, Chiba Institute of Technology, b)Faculty of Eng., Dept. of Electrical and Electronic Engineering, Chiba Institute of Technology
15:00-15:25
(5)
Study on depletion layer visualization using voltage applied electron beam induced current
T. Tomizawa, T. Okazaki, A. Sugiyama, N. Murata, T. Katayama, Y. Kunimune, T. Koyama, and T. Ide
Analysis & Evaluation Technology Dept.. Technology Div., Renesas Semiconductor Manufacturing
15:25-15:50
(6)
Evaluation of dislocations in GaN single crystal by using etch pit method
Y. Yao(a, Y. Ishikawa(a, Y. Sugawara(b, D. Yokoe(b, N. Okada(c, and K. Tadatomo(c
a)Maters R&D Lab, Japan Fine Ceramics Center, b)Nanostructures Research Lab, Japan Fine Ceramics Center, c)Grad. Sch. Sciences and Technology for Innovation, Yamaguchi Univ.
15:50-16:15
《 16:15-16:35 オーサーズコーナー&休憩》

Invited Talk

Chairman: 樋口裕久
(I1)
Invited talk: What value added by replacing Si-IGBT to SiC-MOS
K. Saito
Hitachi Power Semiconductor Device, Ltd.
16:35-17:35
《 17:35-18:30 招待講演者との懇談》

Poster Session

《 17:35-18:30 会場:KFCホールAnnex》
(7)
Automatic cell nucleus extraction from transmitted light images of pluripotent stem cells using deep learning
K. Arita, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(8)
Phase unwrapping of quantitative phase microscope images for cell culture monitoring
S. Tanigawa, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(9)
Image quality enhancement of an SEM image using conditional generative adversarial networks
Y. Midoh and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(10)
Comparison of countermeasures against NBTI/PBTI degradation for arbiter PUF
K. Suzuki, K. Miura, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(11)
Effect of variance stabilization on denoising of low SNR fringe patterns using wavelet hidden markov models
Y. Midoh and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
(12)
Measurement of semiconductor devices using dC/dz of scanning nonlinear dielectric microscopy methods
K. Ohta(a and H. Tsuneyuki(b
a)LSI Solutions Div., Toshiba Information Systems (Japan) Corp., b)Japan Semiconductor Corp.
(13)
Numerical simulation for semiconductor characterization using ∂C/∂z-SNDM
Y. Hiranaga and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
(14)
(Canceled)
Contrast enhancement of amorphous layers in semiconductor using DCFI
N. Nakanishi, H. Sekiguchi, and S. Sadayama
NanoPort Japan, Thermo Fisher Scientific

Evening Session

Location: KFC Hall
Evening Session
Evening session of NANOTS is a special session for discussing on research trend around the world and the future perspective.
18:30-20:30
 
International Conference Report
 
IMC 2018 (Y. Midoh, Osaka University)
 
MNE 2018 (S. Iida, Toshiba Memory)
 
ESREF 2018 (K. Miura, Osaka University)

11月20日(火) 午前 / KFCホール

Invited Talk

Chairman: 小山 徹
(I2)
Invited talk: A new international system device roadmap for cloud/IoT-edge solutions
Y. Hayashi
Chairperson of SDRJ (Renesas Electronics Corp.)
9:00-10:00
《 10:00-10:20 休憩・招待講演者との懇談》

Electron Optics & Application

Chairman: 須賀三雄
(15)
Mitochondria segmentation in scanning electron microscope images using a machine learning approach (2)
K. Adachi, Y. Midoh, and K. Nakamae
Grad. Sch. Information Science and Technology, Osaka Univ.
10:20-10:45

Panel Discussion

Moderator: Susumu Iida (Toshiba Memory Corp.)
Machine learning - Its possibilities and limitations
10:45-12:10
T. Matsunawa (Toshiba Memory Corp.)
T. Ohmori (Hitachi, Ltd.)
S. Ishii (Kyoto Univ.)
Y. Kanazawa (Fujitsu Laboratories Ltd.)
T. Kubo (Toshiba Memory Corp.)
(P1)
Machine learning in computational lithography
T. Matsunawa
Toshiba Memory Corp.
(P2)
Etching profile optimization utilizing plasma engineering and machine learning
T. Ohmori, H. Nakada, I. Masayoshi, K. Naoyuki, U. Tatehito, and K. Masaru
Research & Development Group, Hitachi, Ltd.
(P3)
Three-dimensional image processing methods based on machine learning
S. Ishii
Grad. Sch. Informatics, Kyoto Univ.
(P4)
Application of artificial intelligence technology in design and manufacturing
Y. Kanazawa
Artificial Intelligence Lab., Fujitsu Laboratories Ltd.
(P5)
Utilization big data for innovation in semiconductor memory manufacturing   comprehensive big-data-based monitoring system for yield analysis in semiconductor manufacturing  
T. Kubo
Digital Process Innovation Center, Toshiba Memory Corp.
《 12:10-13:00 昼食休憩》

11月20日(火) 午後 / KFCホール

Invited Talk

Chairman: 飯田 晋
(I3)
Invited talk: Attosecond electron imaging
Y. Morimoto
Ludwig-Maximilians-Universität München
13:00-14:00
《 14:00-14:20 休憩・招待講演者との懇談》

Fault Localization

Chairman: 寺田浩敏
(16)
Open defect localization in 1x5 $\mu$m 3-D TSV structures by light-induced capacitance alteration (LICA)
K.J.P. Jacobs(a, J.D. Vos(a, M. Stucchi(a, I.D. Wolf(a, and E. Beyne(a
a)Dept. 3D and Silicon Photonics Technologies, IMEC, b)Dept. Materials Engineering, KU Leuven
14:20-14:45
(17)
Realization of “skeleton wafer” testing for failure analysis
A. Jingu(a, H. Yanagita(b, S. Okanishi(b, S. Tanaka(c, and T. Koyama(a
a)Analysis & Evaluation Technology Dept., Renesas Semiconductor Manufacturing Co., Ltd., b)Advanced Device Technology Dept., Renesas Electronics Corp., c)Evaluation Analysis Dept., Renesas Engineering Service Co., Ltd.
14:45-15:10
(18)
Detection of open failure using the optical probed thermoreflectance method with light heating at micro-meter area
K. Endo(a, T. Izumiya(a, T. Nakamura(b, N. Chinone(b, K. Koshikawa(b, T. Matsumoto(b, and K. Nakamae(c
a)Discrete Semiconductor Quality & Reliability Engineering Dep., Toshiba Electronic Devices & Storage Corp., b)Systems Div., Hamamatsu Photonics K. K., c)Grad. Sch. Information Science and Technology, Osaka Univ.
15:10-15:35
《 15:35-15:55 オーサーズコーナー&休憩》

Fault Localization/Physical Analysis

Chairman: 二川 清
(19)
Characterization of thermal defects using pulsed emission with DBX camera
M. Morag and N. Leslie
Analytical Instrument Group, Material & Structural Div., Electrical Fault Analysis, Thermo Fisher Scientific
15:55-16:20
(20)
Studies of electro optical frequency mapping by power supply modulation
M. Saeki, Y. Matsumoto, Y. Oka, and H. Tsukui
Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd.
16:20-16:45
(21)
Optimized evaluation of short failure analysis by voltage applied EBAC
J. Fuse(a, T. Sunaoshi(a, T. Kanemura(a, Y. Nara(b, A. Kageyama(c, and T. Mizuno(d
a)Application development Dept, Hitachi High-Technologies, b)Electron microscope systems design 1st Dept, Hitachi High-Technologies, c)Electron Microscope Solution Systems Design Dept, Hitachi High-Technologies, d)Marketing Dept, Hitachi High-Technologies
16:45-17:10
(22)
Failure analysis of Al / Cu bonding by in-situ observation using environmentally controlled high voltage electron microscope
J. Yamaki(a, H. Tamegai(a, H. Maeda(a, H. Tsukui(a, T. Maeda(b, N. Ikarashi(c, and S. Arai(c
a)Element Analysis Section Evaluation Analysis Dept., Renesas Engineering Services Co., Ltd., b)Advanced Process Engineering Section, Renesas Semiconductor Package & Test Solutions Co., Ltd., c)Institute of Materials and Systems for Sustainability, Nagoya Univ.
17:10-17:35
《 17:35-17:55 オーサーズコーナー&休憩》

11月20日(火) 午後 / KFCホール 2nd

Metrology and Inspection

Chairman: 山崎裕一郎
(23)
Prediction of signal characteristics of burried defect in sample by SEM image simulator
T. Yokosuka(a, C. Lee(a, K. Kurosawa(b, H. Kawano(b, and H. Kazumi(b
a)R&D Group, Center for Technology Innovation -Energy, Hitachi Ltd., b)Process Control Systems Research and Development Dept., Hitachi High-Technologies Corp.
14:20-14:45
(24)
Depth measurement technique for extreme deep holes using back-scattered electron images with high accelerating voltage SEM
C. Ida(a, A. Hamaguchi(a, Y. Suzuki(a, T. Nishihata(b, M. Osaki(b, M. Tanaka(b, and T. Yamamoto(c
a)Advanced Memory Development Center, Toshiba Memory Corp., b)Hitachi, Ltd., c)Hitachi High-Technologies Corp.
14:45-15:10
(25)
Development of standard sample for next generation pattern inspection tool
I. Susumu and T. Uchiyama
Nano-Defect Inspection Research Dept., Evolving nano process Infrastructure Development Center (EIDEC)
15:10-15:35
《 15:35-15:55 オーサーズコーナー&休憩》

Physical Analysis II

Chairman: 小瀬洋一
(26)
Non-destructive, high throughput ultrahigh sensitivity micro x-ray fluorescence techniques as an alternative to SIMS for dopant and composition analysis
D.W. Yun, D.B. Stripe, S. Lewis, S. Lau, and X. Yang
Sigray, Inc.
15:55-16:20
(27)
Improved signal intensity in carrier distribution imaging of few-layer MoS2 by scanning nonlinear dielectric microscopy
K. Yamasue and Y. Cho
Research Institute of Electrical Communication, Tohoku Univ.
16:20-16:45
(28)
Development of 2D carrier distribution measurement method by simultaneous measurement of dC/dV (polarity) and dC/dz (density) based on SNDM
T. Yamaoka(a, K. Watanabe(b, S. Hasumura(b, R. Hirose(b, T. Ueno(b, and K. Mizuguchi(c
a)Application Development Dept., Hitachi High-Technologies, b)Design Dept., Hitachi High-Tech Science, c)Marketing Dept., Hitachi High-Technologies
16:45-17:10
(29)
Local evaluation of Al2O3 passivation layers for monocrystalline silicon solar cells by super-higher-order scanning nonlinear dielectric microscopy
K. Kakikawa(a, Y. Yamagishi(a, K. Tanahashi(b, H. Takato(b, and Y. Cho(a
a)Research Institute of Electrical Communication, Tohoku Univ., b)Fukushima Renewable Energy Institute, Advanced Industrial Science and Technology
17:10-17:35
《 17:35-17:55 オーサーズコーナー》